| PART |
Description |
Maker |
| M52D16161A-10BG M52D16161A-10TG M52D16161A |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L16161A-5TG M12L16161A-7BG M12L16161A-7TG M12L1 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L16161A08 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L161 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
ETC
|
| T431616C-7SG T431616C T431616C-6S T431616C-6SG T43 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| T431616B-20S T431616B T431616B-10C T431616B-10S T4 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| K4S161622E-TC/I/E |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 |
Enchanced dual bit 20 bit ADC
SPECIALTY CONSUMER CIRCUIT, PDSO16
JT 41C 41#20 PIN PLUG
LOW POWER & SMALL PACKAGE 16BIT CODEC
Low Power & Samll Package 16bit ## CODEC
LOW POWER & SMALL PACKAGE 16BIT CODEC
|
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystem...
|
